| 2-1 | Title | Novel-Structured and -Functional Nanocarbons Created by Nanoscopic Plasma Surface Processing |
|---|---|---|
| Author(s) | Rikizo Hatakeyama | |
| Abstract | Original approaches using nanoscopic plasma processing have been performed in order to develop C60(Fullerene)-, SWNTs(single-walled carbon nanotubes)-, and DWNTs(double-walled carbon nantubes)-based materials with new functions relating to nanoelectronics. Effects of ion energy, flux, and radicals on the macro-quantity synthesis of N@C60 which encapsulates an atomic nitrogen inside the empty C60 for the first time come to be revealed by the precise plasma-parameter control. Based on the innovative creation of alkali-metal/halogen/ferromagnetic atoms and C60/DNA molecules encapsulated SWNTs/DWNTs in addition to freestanding individual pristine SWNTs of high quality, their electromagnetic properties are intensively investigated. As a result, we have for the first time succeeded in controlling the continuous transition from p-type to n-type air stable transport by adjusting an amount of dosed atoms and molecules inside SWNTs/DWNTs, and in forming nano structures of magnetic semiconductor, nano pn junctions with rectifying characteristic, and nano structures with distinct negative differential resistance of high peak-to-valley ratio. |
| 2-2 | Title | Fundamental Research on Nano-Electronic Devices |
|---|---|---|
| Author(s) | Michio Niwano | |
| Abstract | Our Research is aimed at understanding and controlling the structure, reactivity, and electrical properties of surfaces and interfaces of nano-electronic devices, such as organic and bio-electronic devices. The research is interdisciplinary in scope, integrating concepts from various research fields, including semiconductor technology, supramolecular chemistry, etc. We are investigating the fabrication and characterization of organic field-effect-transistors (OFETs) and organic electroluminescent devices. We are also investigating the method of achieving real-time, lavel-free detection of biological molecules, such as DNA and proteins by using surface infrared spectroscopy combined with nano- and micro-fluidic channels fabricated on semiconducter surfaces. Some recent results are presented. |
| 2-3 | Title | Application of the ultrasonic microspectroscopy system to wide band gap semiconductor materials - evaluation of diamonds - |
|---|---|---|
| Author(s) | Jun-ichi Kushibiki, Yuji Ohashi, Mototaka Arakawa and Hiroyuki Odagawa | |
| Abstract | The line-focus-beam ultrasonic material characterization (LFB-UMC) system which plays central role in the ultrasonic microspectroscopy (UMS) system was applied to evaluation of wide band gap semiconductor materials, especially diamonds, for future electronics. Diamonds have superior electrical, thermal, and mechanical properties. We expanded our system and method to measurements for diamonds with the highest velocity among materials. We compared two kinds of diamond specimens: one is grown by the high-pressure high-temperature (HPHT) method, the other is grown by the microwave plasma chemical vapor deposition (MPCVD) method. We observed a difference of about 0.45% in the surface acoustic wave (SAW) velocity and detected a difference of about 20 ppm in the lattice constant. We demonstrated that the UMS system is one of promising technologies for evaluating the wide band gap semiconductor materials. |
| 2-4 | Title | Scanning nonlinear dielectric microscopy with atomic resolution |
|---|---|---|
| Author(s) | Yasuo Cho and Ryusuke Hirose | |
| Abstract | Non-Contact Scanning Nonlinear Dielectric Microscopy (NC-SNDM) operated under ultra high vacuum (UHV) conditions was developed. This microscopy enables the simultaneous measurement of topography and the dielectric properties of a specimen. In the measurement of electrically conductive materials, the tunneling current is also measurable. The Si(111)7~7 atomic structure was successfully resolved using this new SNDM technique. This is the first report on the achievement of atomic resolution in capacitance measurements. |
| 2-5 | Title | Time-resolved scanning tunneling microscope light emission spectroscopy |
|---|---|---|
| Author(s) | Yoichi Uehara and Sukekatsu Ushioda | |
| Abstract | For many dynamic studies of surface nanostructures, it is highly desirable to possess a means of simultaneously combining high spatial and temporal resolution. We have succeeded in adding picosecond time resolution to the scanning tunneling microscope (STM) light emission spectroscopy, which has originally high (e.g., atomic) spatial resolution. In this method STM light is excited by the pulsed tunneling current that is produced by pulsed laser irradiation at the tip - sample gap and the light is detected by a streak camera operated in synchronization with the laser pulse. In this talk we will discussthe STM light emission mechanism under pulsed laser irradiation. |
| 2-6 | Title | Flexible fiberoptic probes for Raman and FT-IR remote spectroscopy |
|---|---|---|
| Author(s) | Yuji Matsuura | |
| Abstract | Remote Raman and FT-IR spectroscopy systems based on hollow optical-fiber probes are proposed and some results on preliminary experiments are shown. For Raman spectroscopy, a hollow fiber probes with a ball lens at the end works as a confocal system and it enables detection of molecular structure of bio-tissues with a high signal-to-noise ratio. Owing to the small diameter, the probes are useful for in vivo, non-invasive analysis using a flexible endoscope. A hollow-fiber probe for remote FT-IR spectroscopy is also useful for endoscopic measurement of infrared reflectometry of inside body because of high flexibility and durability, non-toxicity, and low transmission losses of the hollow-fiber-based probes. |
| 2-7 | Title | Spintronics in ferromagnetic and nonmagnetic semiconductors |
|---|---|---|
| Author(s) | Hideo Ohno | |
| Abstract | Ferromagnetic and nonmagnetic semiconductor heterostructures are excellent media to explore new field of semiconductor physics and technology (spintronics), where both charge and spin play critical roles. There are two major directions for the exploitation of spin-related phenomena in semiconductors. One concerns with new functionalities and materials for classical devices using ferromagnetic semiconductors and their based heterostructures. The other is quantum related spintronics, which involves coherent manipulation of electron and nuclear spins in nonmagnetic semiconductor quantum structures for future quantum information technology. We have succeeded to contribute to recent progress in both directions in gSemiconductor Spintronicsh. The work was partly supported by JST, JSPS, and IT program, MEXT. |