| 3-1 | Title | Atomically Controlled Processing for Future Si-Based Devices |
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| Author(s) | Junichi Murota and Masao Sakuraba | |
| Abstract | For the fabrication of future Si-based ultimate small devices, we show the concept of atomically controlled processing based on atomic-order surface reaction control. Atomic layer doping of N, P or so on is achieved. Atomic layer doping results indicate that new group IV semiconductor of very high carrier concentration and higher mobility is prepared compared with doping under equilibrium conditions. Additionally, it is confirmed that the band engineering for group IV semiconductors becomes possible by the strain control of the SiGe/Si heterostructure due to striped patterning. These results open the way to atomically controlled CVD technology for ULSIs. |
| 3-2 | Title | Ultra High-Performance Silicon Technology Realized by Damage-free Radical Reaction Based Process |
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| Author(s) | Tadahiro Ohmi | |
| Abstract | Damage-free microwave-excited low-electron temperature and high-density plasma process technology has been realized. Thanks to highly-reactive radials and well-controlled ions, the technology has been successfully applied to high-quality film formation on Si surface regardless of the crystal orientation, damage-free etching and PECVD. Consequently, an n-MISFET with Si3N4 gate insulator formed on Si(110) has a possibility of not only 10x performance but also very low 1/f noise (1/10) characteristics as compared to a conventional n-MOSFET. The technology can also realize high-performance three-dimensional SOI MISFET. Such radical-reaction-based process-technology is the key for deep sub-100nm fully-balanced CMOS ULSI operating at several 10s GHz. |
| 3-3 | Title | Impact of Surrounding Gate Transistor (SGT) on Future High Density ULSI |
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| Author(s) | Fujio Masuoka | |
| Abstract | SGT can improve the performance of ULSI. The SGT arranges source, gate and drain vertically. The gate electrode surrounds a silicon pillar. The SGT has a large effective channel width in a small occupied area. The small occupied area leads to the small capacitance. The effective electric field of SGT is smaller than that of planar MOSFET. Therefore the electron mobility of the SGT is larger than that of planar MOSFET. The current through the channel is enhanced and the drivability of SGT is higher than that of planar MOSFET. Therefore, high speed and low power operation can be achieved. |
| 3-4 | Title | A New Concept of 3-Dimentional Multilayer-Stacked System-in-Package |
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| Author(s) | Kazuo Tsubouchi and Hiroyuki Nakase | |
| Abstract | High frequency characteristics of any layer interstitial via hole (ALIVH) substrate have been evaluated for an application to the RF modules on 60GHz. A dielectric constant and loss tangent up to 60GHz was measured using strip line resonator designed on the ALIVH substrate. Measured dielectric constant 3.85-3.47 and loss tangent of 0.032-0.043 were almost constant from 2.5GHz to 60GHz. Equivalent lumped component circuit of via hole was modeled from measurement of frequency of strip line resonator with via hole. T-type LC circuit was employed for the circuit. The evaluated inductance was 0.090-0.128 nH and capacitance was 0.129-0.195 pF. It was confirmed that the high frequency characteristics of ALIVH were sufficient forthe application to RF module and 3-D SiP with no critical degradation. |
| 3-5 | Title | Tailor-Made Nano Structured Material for Highly Qualified Spin Related Devices |
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| Author(s) | Migaku Takahashi | |
| Abstract | Due to spread of ubiquitous network, informations all over the worldare exchanged multi-directionally and instantaneously. Our main goalis to open a way to realize ultra high density spin storage deviceswith fast operation speed at very high-frequency range utilizing aspin nano-technology. For realizing spin related devices, preciselycontrolled fabrication technology with nano-scale according to therequired properties in each device is essential from material,processes, and physical view point. The control of ultra-thinthickness, surface morphology, grain size, and interface betweenoxide and ferromagnetic metals is a required key issue formagnetoresistive random access memory (MRAM) with tunnelmagnetoresistance (TMR) or spin valve (SV) head with giantmagnetoresistance (GMR) for hard disk drives (HDD). The control ofdomain structure in soft-magnetic underlayer (SUL) and narrower sizedistribution of the magnetic particle in recording layer areindispensable for advanced storage media with high S/N ratio andthermal stability.Ultra clean (UC) dry-process proposed by us has provided fruitfulresults on film growth of seed, magnetic, and oxide layers for thecurrent HD, MRAM and SV head with high TMR and GMR ratio. While, wehave proposed new concept and material as underlayer instead ofconventional SUL for HD with perpendicular magnetic recording media.Furthermore, mono-dispersed magnetic nanoparticles with polymersshowing superparamagnetic properties fabricated by a chemicalsynthesis can be a promising key material to realize high frequencyelectronic devices instead of conventional dielectric materials.Within the frame work of the present paper, correlation betweenprocess parameter and magnetic property developed for eachcategorized research items mentioned above will be widely discussedin connection with spin related devices. |
| 3-6 | Title | High density read/write mechanism in novel perpendicular magnetic recording media |
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| Author(s) | Hiroaki Muraoka, Simon, J. Greaves and Kenji Miura | |
| Abstract | Perpendicular magnetic recording was eventually commercialized in harddisk drives from 2005, however, we must strive to maintain the rapidincrease in areal density for the future of storage technology. Themain issue is how to overcome the areal density limit for granularmedia, in which thermal stability and media noise requirement cannotbe simultaneously satisfied because of the extremely small grainvolume. Patterned media has no thermal decay problem, because strongexchange coupling inside the bit stabilizes the magnetization.However, since the bit size is extremely small, typically less than 25nm, the bit pattern cannot easily be formed by present lithographytechniques. In the light of read/write theory we discuss new issuessuch as noise fluctuations caused by the patterned edge roughness dueto lithography. This work includes a part of the research activity of theIT21 RR2002 storage project. |
| 3-7 | Title | Terahertz Biophotonics using Coherent Anti-Stokes Raman Spectroscopy |
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| Author(s) | Jun-ichi Shikata | |
| Abstract | Recently, there are increasing interests on terahertz (THz) scienceand technology, including those in biomedical fields. SinceTHz-frequency vibrational modes are sensitive to the macroscopicnature of biomolecules (binding state of DNA, conformation, polymorph,etc.), new bio-functional information is expected. Many resonances inthe THz region are both infrared- and Raman-active, therefore, theboth approach will be possible. In this talk, coherent anti-StokesRaman (CARS) spectroscopy of THz-frequency resonances of bio-relatedmolecules is presented. Since THz-waves suffer large absorption lossin polar liquids, alternatively, we have been studying CARSspectroscopy. By using collinear, confocal geometry, wide-range CARSspectra from 30 to 1700 cm-1 (0.9-51 THz) were obtained for proteinsand sugars in water solution. Polarization discrimination in CARS hasbeen applied for the suppression of nonresonant background, andanalysis of broad, overlapped spectra. Furthermore, backward-CARSdetection was performed for both transparent (water solution) andopaque (powder) samples. |
| 3-8 | Title | Liquid crystal science and technology to achieve high quality large size liquid crystal displays |
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| Author(s) | Tatsuo Uchida | |
| Abstract | For the future display, we focused on the optically compensated bend (OCB) mode liquid crystal display (LCD), which shows high quality moving picture. In this paper, following three important themes for OCB-LCD are discussed. The first theme is new interfacial evaluation method of LC and substrate. The second is new technology for initial transition of the OCB-LC alignment which is necessary for low voltage-driving. The third is accurate and simple measurement method of three viscosities of LC materials. These theoretical and experimental results contribute to a high-quality and low power consumption LCD with a large size. |