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Organization / Research

Ohno Laboratory


photo Hideo OHNO, Professor
Shunsuke FUKAMI, Associate Professor
Shun KANAI, Assistant Professor
Justin Llandro, Assistant Professor

Our research activities cover the areas of preparation, characterization, and application of new classes of compound semiconductors and their quantum structures for new functional high-speed devices, which can be realized by controlling the electronic and spin states in semiconductors. More specifically, our research is focused on (1) Semiconductor Spintronics, where non-volatile spin memory and new functionality based on the spin degree of freedom using III-V based ferromagnetic/non-magnetic semiconductor heterostructures are being explored, (2) THz-far infrared lasers based on the intersubband optical transition in broken-gap semiconductor heterostructures (InAs/GaSb), (3) the quantum transport phenomena in two-dimensional electron gases, and (4) non-volatile spin memories based on magnetic metal devices.

Materials of interest include such nonmagnetic semiconductor heterostructures as GaAs/AlAs and InAs/GaSb, and III-V based ferromagnetic semiconductors such as (Ga,Mn)As and (In,Mn)As. All these materials are prepared by Molecular Beam Epitaxy.

Research topics:

  1. Semiconductor Spintronics
    1. Properties and Application of III-V Based Ferromagnetic Semiconductors and their Quantum Structures
    2. Spin Memory
    3. Spin Coherence in Semiconductor Nanostructures and Its Application to Quantum Information Technology
  2. Quantum Cascade Structures and Their Application to THz Optical Devices
  3. Growth and Characterization of Semiconductor Quantum Nano-Structures
  4. Magnetic Metal Devices and their Application to Nonvolatile Spin Memories
Group of Electrical Engineering, Communication Engineering,
Electronic Engineering, and Information Engineering, Tohoku University
6-6-05, Aramaki Aza Aoba, Aoba-ku, Sendai, Miyagi 980-8579, Japan
TEL : 022-795-7186 (Japanese Only)
Email :