| B1-1 | Title | Invited Lecture : Multiple beam interferometry: new thoughts on an old subject |
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| Author(s) | Prof. Frank V. Kowalski | |
| Abstract | Multiple beam interference is found in diverse subjects such as lasers,gratings, filters, radar, crystallography, antennas, and noise generated in wireless communications. It seems then that there is little opportunity for new ideas in such a well studied field. However, by introducing a frequency shift in each of the multiple paths, the interference properties change dramatically. An overview of this novel device will be given. |
| B1-2 | Title | Coherent Anti-Stokes Raman Spectrometer for THz-Frequency Modes in Biomolecules |
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| Author(s) | S.L. Zhao, J. Shikata, M. Nakazawa, T. Matsumoto and H. Ito | |
| Abstract | .In this paper, THz-frequency vibrational modes of several biomolecules (protein, benzene and toluene) in aqueous solution using coherent anti-Stokes Raman scattering (CARS) method were measured. In the CARS spectrometer, near-infrared OPOs were used. Fixing the pump wavelength at 780 nm and tuning the Stokes wavelength from 781 to 857nm and from 792 to 885nm, we got the CARS signals of benzene, toluene and protein, respectively. Several new peaks of the protein (albumin) were clearly found in the low-frequency region of 200-500 cm-1 (= 6-15 THz) in addition to the well known marker band of albumin. |
| B1-3 | Title | Periodic Poling of LiNbO3 Crystal for Novel Optical Communication Devices |
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| Author(s) | Yoshie Ohta, Tomohisa Sato, Takeshi Sato, Yuzo Sasaki, Hiromasa Ito | |
| Abstract | Optical communication system needs wavelength change methods for optical source, routing, channeling and so on. Quasi-phase-matching (QPM) is such wavelength converting method. Due to its high optical nonlinearity, periodically poled LiNbO3 offers significant advantages for optical parametric processes. The poling method was first invented in our laboratory in 1988. We report our poling methods of LiNbO3 crystal and its latest trend. |
| B1-4 | Title | Frequency shifted feedback lasers and applications |
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| Author(s) | Cheikh Ndiaye, Hiromasa Ito | |
| Abstract | A frequency shifted feedback laser shows unusual behaviors compared to conventional lasers. Experimental and theoretical studies in our laboratory revealed for the first time the generation of a comb of linearly chirped frequencies in this laser, with chirp rate faster than 10^17Hz/s. This makes the FSF laser particularly successful in long distance and high resolution, high sensitivity measurements. Here we describe some applications of this laser in optical ranging. |
| B1-5 | Title | Invited Lecture : Coherent Detection Schemes for Three-Dimensional Tomographic Imaging |
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| Author(s) | Prof. Kinpui Chan | |
| Abstract | Optical coherence tomography (OCT) is a novel imaging modality based on low-coherence interferometry. This paper summarizes some of our latest work on the development of three-dimensional (3D) OCT where we have taken two approaches. In the first approach we have developed a two-dimensional heterodyne detection technique for real-time horizontal cross-sectional (en-face) imaging. A novel detection scheme has been proposed, which enables parallel heterodyne detection with a commercially available imager such as a CCD camera. En-face OCT images are acquired at the rate of 100 frames/s, making the rapid reconstruction of 3D images possible. In the second approach, a non-scanning OCT system configuration based on off-axis interferometry is being studied. Using a newly developed angular-dispersion imaging scheme, we show that the axial reflectance profile in OCT measurement can be detected instantaneously with a sensor array. |
| B2-1 | Title | Invited Lecture : Engineering challenges for future disc drives |
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| Author(s) | Assosiate Prof. Simon Greaves | |
| Abstract | The ever increasing demands placed on storage devices by modern applications such as video recording and editing has led to a rapid increase in the storage capacity of hard disc drives. In order to continue to increase the areal recording density at the current rate a number of technically difficult problems must be addressed. Longitudinal media must be made thinner if they are to support higher densities. However, if the media are too thin the magnetisation becomes unstable and data may be lost. An alternative approach is to use a perpendicular recording medium, but this involves radical changes to the medium and head design. This talk will address some of these problems and discuss ways to overcome them. |
| B2-2 | Title | Fe-based nanoparticles produced by chemical synthesis |
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| Author(s) | W. Pei, I. Ohta, S. Sakibe and M. Takahashi | |
| Abstract | Synthesis methods of Fe-based nanoparticles using colloidal chemical approaches are reviewed. The uniform particle size and monodisperse particles can be produced by chemical synthesis method. Typically, these approaches involve rapid injection of reagents into hot surfactant solution followed by refluxing at high temperature, or the mixing of reagents at a low temperature and heating under controlled conditions. Nanoparticles of Pt-Fe and other related iron or cobalt containing alloys have been made by simultaneously reacting their constituent precursors. Some ferrite nanoparticles have been synthesized by thermal decomposition of organometallic precursor. To prevent Fe to be oxidized, core-shell particles have been presented. |
| B2-3 | Title | Reduced Surface Roughness and Increased Lateral Grain Size in Metallic Thin Films by Post IR-heat Treatment |
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| Author(s) | Kenichi Imakita, Masakiyo Tsunoda and Migaku Takahashi | |
| Abstract | The effect of post IR-heat treatment on the metallurgical microstructure of strong (111) texture of the face centered cubic metallic thin films were investigated as a function of temperature of the heat treatment. Surface morphology of the metallic films drastically changed with increasing the temperature. Surface roughness decreased at TIR / TM = 0.2 - 0.3, where TM is the melting point of the metals. When TIR / TM = 0.3 - 0.35, lateral grain size was enlarged. In this study, we will discuss the factor of changing of surface morphology. |
| B2-4 | Title | Orientational dependence of exchange anisotropy of Mn-Ir/Co-Fe epitaxial bilayers |
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| Author(s) | Takashi Sato, Masakiyo Tsunoda, and Migaku Takahashi | |
| Abstract | With increasing the track density of hard disk drives (HDDs), dimensions of spin valve (SV) elements become smaller and will be comparable to typical thin film grain diameter in near future. In such the case, a SV element is composed of a single crystalline and its magnetic/transport properties might be different from those of the present polycrystalline SVs. One of the issues should be discussed for the forthcoming single crystalline nano-scaled-SVs is the effect of crystallographic orientation on the exchange anisotropy. In the present study, we fabricated Mn75Ir25(dAF=2-20nm)/Co70Fe30(4nm) bilayers on single crystal MgO substrates with respective crystallographic orientation by sputtering. |
| B2-5 | Title | Reduction of magnetic interaction in Co(B)/Pd multilayer perpendicular media using phase separated PdSi-O underlayer |
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| Author(s) | H. Domon, D. D. Djayaprawira, and M. Takahashi | |
| Abstract | Co/Pd multilayer ?lms have been studied for application to perpendicular magnetic recording media, because of their large perpendicular anisotropy and high squareness. To achieve high recording density using Co/Pd multilayer, it is essential to reduce the media noise by isolating crystal grains magnetically coupled. We succeeded in reducing the intergranular exchange coupling of the multilayer with a phase separated PdSi-O underlayer which is sputtered in Ar and O2 atmosphere. We suggested that the underlayer becomes a template for the growth of the multilayer and promotes the formation of grain boundaries in the multilayer, which reduces magnetic interaction among grains. |
| B2-6 | Title | Resolution Improvement of Transition with Shielded Single Pole Writer |
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| Author(s) | W. Xia, H. Muraoka, H. Aoi and Y. Nakamura | |
| Abstract | In perpendicular magnetic recording the structural optimization by locating a front yoke in the vicinity of the main pole was proposed in order to improve head field gradient. In this paper, recording resolution improvement by the gradient enhancement was examined with a 2D FEM calculation using a media model. The parameter of the calculation was the coercivity of media. The transition parameter a is improved from 26.32 nm (Hc=3000 Oe) to 5.26 nm (Hc=9000 Oe) using the front yoke head with high gradient. The recording resolution can be improved with the new head for a large range of media. |
| B2-7 | Title | Structure and Magnetic Properties of Mn-Si-C Sputtered Films |
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| Author(s) | Yoshito Ashizawa, Yuji Suzuki, Shin Saito and Migaku Takahashi | |
| Abstract | Mn-IVB (IVB = Si and C) thin films, which some groups reported show ferromagnetism at room temperature, have attracted much attention. The origins of the ferromagnetism of the films have not been clear yet, and there is no common view of the ferromagnetism in this material system because there are some differences in the structure and the magnetic properties among some groups. In this framework, the investigated results about the phase formation and the origin of appearance of the ferromagnetism of Mn-Si-C thin films fabricated by sputtering are reported. |
| B2-8 | Title | The Formation and Stability and Magnetism of α′Phase in Fe-(B, C, N) Films |
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| Author(s) | Kazuyuki Sunaga, Masakiyo Tsunoda, and Migaku Takahashi | |
| Abstract | Fe-(B, C, N) films were fabricated on MgO single crystal substrates using reactive sputtering. Structural analysis and magnetic measurement were carried out. It was clarified that: (1) the formation and stability of α′phase in Fe-(B, C, N) films depend on the kinds and content of interstitial element. (2) the saturation magnetization of α′-Fe-N films is 10 % larger than that of α′-Fe-(B, C) films. (3) α′-Fe-C films are thermally stable up to 250℃. (4) α′-Fe-C films with 4-8 at.% C are promising candidates for use as writing head material. |
| B2-9 | Title | Wireless Magnetic Micro-Machine with Magnetic Thin Film |
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| Author(s) | Aya Yamazaki, Masahiko Sendoh, Kazushi Ishiyama, Ken Ichi Arai, Ryutaro Kato, Masaki Nakano and Hirotoshi Fukunaga | |
| Abstract | As the magnetic micro-machines are driven by a magnetic field, they require no power supply cables, no batteries, and no controlling systems on the machine body. We fabricated the spiral-type micro-machine (outer diameter; 0.14 mm, length; 1.0 mm) by a tungsten wire (φ20 mm). NdFeB film magnet was deposited on the spiral-machine by the PLD method. In the experiment, the wireless micro-machine swam at the speed of 0.2∼1.6 mm/s. This result indicated that the spiral shape was suitable for miniature swimming machine. |
| B2-10 | Title | High frequency carrier-type thin film sensor by phase difference measurement |
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| Author(s) | T. Ozawa, H. Mawatari, S. Yabukami, K.I. Arai | |
| Abstract | An impedance of a magnetic thin film is changed when applying a magnetic field or a strain. The high frequency carrier-type thin film sensor makes this phenomenon the principle, and it is able to apply to a high sensitivity magnetic field sensor and strain sensor. We have detected the impedance of thin film sensor by Amplitude-Modulation method so far. Here changing the impedance also occurs changing a phase difference, we directed our attention to this phenomenon and measured the magnetic field using thin film sensor by measuring the phase difference. |
| B3-1 | Title | Invited Lecture : TBD |
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| Author(s) | Prof. Deng-Ke Yang | |
| Abstract |
| B3-2 | Title | Novel Screen Technology for High Contrast Front Projection Display by Optimizing the Projected Light Angle Range |
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| Author(s) | B.Katagiri, T.Ishinabe, T.Miyashita and T.Uchida | |
| Abstract | One problem with front projection displays is that the screen contrast ratio decreases in bright ambient light. We proposed a novel front projection-display system that diffuses only projected light towards observers and reflects an ambient light towards the other angle ranges. With this system, we realized a high quality front projection-display with a high contrast ratio even in a bright room. |
| B3-3 | Title | Analysis and Control of Splay-to-Bend Trnasition in OCB-Mode |
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| Author(s) | Ken Kuboki, Tetsuya Miyashita, Takahiro Ishinabe, and Tatsuo Uchida | |
| Abstract | Optically compensated bend mode (OCB-mode) is promising as the next generation liquid crystal display, because of its fast response and wide viewing angle. This mode requires transition from an initial splay alignment to a bend alignment before operation. In this study, we have developed a method of creating a transition nucleus in the cases of using nematic liquid crystals with and without chiral dopant. We have also clarified that the transition requires the twist alignment with twist angle larger than 90 degrees, and that the angle depends on voltage applied to the cell. |
| B3-4 | Title | The new concept of optical design for a wide-viewing-angle liquid crystal display without grayscale inversion |
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| Author(s) | T. Higano, T. Ishinabe, T. Miyashita and T. Uchida | |
| Abstract | We clarified the cause of grayscale inversion that brings degradation of quality of images. Based on it, we propose a new concept of a wide-viewing-angle liquid crystal display without grayscale inversion. In addition, we have designed retardation films that compensate this type of liquid crystal cell. |
| B4-1 | Title | Invited Lecture : MEMS -- Now and Future Milestones, Roadblocks, … New Routes? |
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| Author(s) | Prof. Richard S. Muller | |
| Abstract | For MEMS, now represents young adulthood after a promising childhood and a robust adolescence. Now is also the time to expand horizons beyond those set by the bounds of an adapted IC-technology base. Once considered by many engineers as an accessory for sensors, the field of MEMS can now be seen as a highly promising path toward products described by its first and last names: MICROSYSTEMS. Solid-state microelectronics has clearly led the way, serving as the mother lode for materials, processes, and design ideas. However, applications to such areas as ink-jet printing and lately to bioelectronics have raised challenges for which inspi-ration from the integrated-circuits field is not so straightforwardly useful. Inspired responses to these new challenges nonetheless, encourage this author that there is much growth and change still to come in the MEMS field; as with the IC experience, new opportunities and wid-ened horizons seem to accompany each MEMS advance. The ripe old age and somnolence of vacuum tubes lies far in the future. |
| B4-2 | Title | The design of programmable interconnect architecture for a dynamically reconfigurable LSI - the Flexible Processor |
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| Author(s) | Takeshi Ohkawa, Amir Jamak, Koji Kotani and Tadahiro Ohmi | |
| Abstract | The critical issue in designing programmable LSI, such as FPGA (Field Programmable Gate Array), is a programmable interconnect architecture, which determine the operation speed and the logic gate capacity of the device as well as the flexibility. In the case of dynamically reconfigurable programmable devices, the design of programmable interconnect architecture needs another aspect, because the amount of configuration information must be reduced in order to shorten the period for on-line configuration of the device. We have developed a dynamicaly reconfigurable LSI named Flexible Processor with reduced configuration information. This paper describes a design methodology of programmable interconnect architecture for it. |
| B4-3 | Title | Face Recognition Algorithm Using Vector Quatization Histogram Method |
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| Author(s) | Qiu Chen, Koji Kotani, and Tadahiro Ohmi | |
| Abstract | We have developed a very simple yet highly reliable face recognition method called VQ histogram method. Codevector referred (or matched) count histogram, which is obtained by Vector Quantization (VQ) processing of facial image, is utilized as a very effective personal feature value. By applying appropriate low pass filtering to facial image and VQ processing, useful features for face recognition can be extracted. Experimental results show recognition rate of 95.6 % for 40 persons’ 400 images of publicly available ORL database containing variations in lighting, posing, and expressions. Equal Error Rate (ERR) of 2.6 % is obtained for verification experiment. By combining multiple low pass filtering procedures, recognition rate increases up to 97 % or higher. |
| B4-4 | Title | High-performance MOS Devices on Si(110) Oriented Surface |
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| Author(s) | Tatsufumi Hamada, Tomoyuki Suwa, Masaaki Higuchi, Akinobu Teramoto, Masaki Hirayama, and Tadahiro Ohmi | |
| Abstract | MOSFET formation on other surface orientations besides (100) is important for realizing a 3-D structure transistor. However, the conventional gate formation technology can form high quality insulator films only on Si(100) surface. In this presentation, we demonstrate that very high quality gate insulators could be formed on every silicon surface by the microwave-exited high-density plasma oxidation/nitridation at 400 C (radical insulator formation) and the high-performance p-MOSFETs on Si(110) surface using this insulator formation technology. |
| B4-5 | Title | A Study of a Domain Oriented Dynamically Reconfigurable Processor for Short-TAT
Verification - A Case of FFT-centric Aplications - |
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| Author(s) | Naoto Miyamoto, Leo Karnan, Kazuyuki Maruo, Koji Kotani, and Tadahiro Ohmi | |
| Abstract | A dynamically reconfigurable arithmetic logical unit (DR-ALU) specific to the fast Fourier transform (FFT) centric algorithms is presented. This DR-ALU can be configured to more than 7 kinds of basic operations such as butterfly operation, a complex multiplication and phase calculation using both multiply accumulation and division. Also contained with the DR-ALU is the division, square-root, multiplication merged module (DSM3) which can carry out above 3 fundamental calculations. By resource sharing the fulladder array, DSM3 has 35% less gate size than the sum of the independent 3 units. |
| B4-6 | Title | AlN Epitaxial Film on 6H-SiC(0001) Using MOCVD for GHz-Band SAW Devices |
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| Author(s) | K. Uehara, C.M. Yang, T. Furusho, H. Nakase, S. Kameda, S.K. Kim, S. Nishino and K. Tsubouchi | |
| Abstract | We have developed aluminum nitride (AlN) (0001) epitaxial film with crack free surface on silicon carbide (6H-SiC) (0001) substrate using metal-organic-chemical-vapor deposition (MOCVD) method without hydro chloride (HCl) annealing process. The conditions were low substrate temperature of 1,100 degree C and high V-III mol ratio of 25,000. The pressure in reactor was 20 torr. Crack free surface of AlN leads decreasing the propagation loss and stable fabrication of interdigital transducers (IDTs) strip lines. AlN (0001)/6H-SiC(0001) structure has potential of GHz-band SAW devices. |
| B4-7 | Title | High C-Axies-Oriented AlN Film Using MOCVD for 5GHz-Band FBAR Filter |
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| Author(s) | C.-M. Yang, K.Uehara, S.-K. Kim S.Kameda, H,Nakase, and K.Tsubouchi | |
| Abstract | We have developed a polycrystalline c-axis oriented aluminium nitride (AlN) film on Mo/SiO2/(100)Si structure for film-bulk-acoustic resonator (FBAR) filter using metal-organic-chemical-vapor deposition (MOCVD). AlN film has been grown on Mo/SiO2/(100)Si substrate using MOCVD with temperature of 1050℃, pressure of 20torr and Ⅴ-Ⅲ ratio of 25000. Before deposition, 1100℃, H2 annealing process was carried out for 20minutes. Deposited AlN film has been evaluated by X-ray diffraction (XRD). It is confirmed that the deposited film is the c-oriented poly-crystalline film, measured FWHM is 2.98°which promises the success of the FBAR filter for 5GHz band. |
| B4-8 | Title | Packet SS-CDMA system:Highly precise carrier frequency offset compensation |
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| Author(s) | Atsuyoshi Yamaguchi, Jun Takagi, Hiroshi Oguma, Seong-Kweon Kim, Suguru Kameda, Hiroyuki Nakase, Yoji Isota, and Kazuo Tsubouchi | |
| Abstract | We have proposed new carrier frequency offset compensation algorithm for packet spread-spectrum code-division multiple-access (SS-CDMA) system. For evaluation of carrier frequency offset, 11-chip Barker codes were inserted into middle and end of the information block as pilot signals. Rotation direction and rotation amount due to carrier frequency offset are detected by phase differences between a preamble and pilot signals. Using the proposed algorithm, carrier frequency offset is evaluated by single packet. We have evaluated bit error rate (BER) performance of packet SS-CDMA modem with the proposed algorithm by computer simulation. Under carrier frequency offset of less than 0.3ppm, at the BER of 10-3, the degradation from the theoretical limit was found to be less than 0.2dB. |
| B4-9 | Title | Surrounding Gate type MOS Capacitor Using 0.4um MOS Technology |
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| Author(s) | Makoto Iwai, Hitoshi Ohta, Masahiko Suzuki, Hiroshi Sakuraba, Tetsuo Endoh and Fujio Masuoka | |
| Abstract | We fabricate the Surrounding Gate type MOS capacitor with 0.4um rule. In order to investigate the sidewall gate oxide capacitance for the Surrounding Gate type MOS capacitor, thick oxides are formed both on the top of pillars and on the bottom of trenches compared with the gate oxide. The gate oxide thickness obtained by C-V curves is 16nm. Electrically extracted the gate oxide thickness for Surrounding Gate type MOS capacitor agrees well with physical gate oxide thickness within 5.9% (1nm) error. |
| B4-10 | Title | NAND DRAM with Surrounding Gate Transistor (SGT)-type gain cell |
|---|---|---|
| Author(s) | Hiroki Nakamura, Tetsuo Endoh, Hiroshi Sakuraba, and Fujio Masuoka | |
| Abstract | This paper descripts NAND DRAM with SGT-type gain cell. This SGT-type gain cell structure is composed of SGT and SGT-type capacitor stacked on planar read transistor, vertically. Its cell size can be reduced to be 4F2 since it can be arranged to have the cross-point-type configuration. Since it operates as gain cell, it's possible to obtain sufficient amount of signal charge regardless of the stored amount. Therefore, low voltage operation and cell area of 5.5F2 using design parameters from ITRS2001 are achieved by the proposed cell. |
| B4-11 | Title | Analysis of Soft Errors in Floating Channel type Surrounding Gate Transistor (FC-SGT) DRAM Cells |
|---|---|---|
| Author(s) | Fumiyoshi Matsuoka and Fujio Masuoka | |
| Abstract | This paper clarifies alpha-particle-induced soft error mechanisms in FC-SGT DRAM cells. FC-SGT DRAM cell arranges bit-line (BL), storage node and body region in a silicon pillar vertically and achieves cell area of 4F2 per bit. Floating body effect is a significant factor to cause soft errors in floating channel type devices. The surrounding gate structure, however, can suppress the floating body effect compared with planar SOI DRAM cell. Therefore, FC-SGT DRAM is a promising candidate for future high density DRAMs having high soft-error immunity. |
| B4-12 | Title | Reduction of Pass-Gate Leakage by Silicon-Thickness Thinning in Double-Gate MOSFETs |
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| Author(s) | Wataru Sakamoto, Tetsuo Endoh, Hiroshi Sakuraba, and Fujio Masuoka | |
| Abstract | This paper shows the reduction of Pass-Gate Leakage (PGL) by silicon-thickness thinning in Double-Gate (DG) MOSFET. Thinning down the silicon-thickness of DG MOSFET suppresses the body potential increase which causes the PGL current. Even if the worst case, in DG MOSFET which has thin silicon-thickness, the PGL current reduces faster together with the body potential. The charge transported by the PGL current at the worst case has been reduced to about 10.7% by silicon-thickness thinning 100nm to 10nm. |
| B4-13 | Title | Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH3 and SiH4 |
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| Author(s) | Youngcheon Jeong, Masao Sakuraba and Junichi Murota | |
| Abstract | Atomic-layer doping of N in Si epitaxial growth by alternately supplied NH3 and SiH4 was investigated using an ultraclean low-pressure chemical vapor deposition (LPCVD). High quality epitaxial growth of the multi-layer N doped Si film composed of the N layers of 3x1014cm-2 and the 3.0nm Si spacer is achieved. On the other hand, in case of 0.5nm Si spacer, the crystallinity of N doped Si film is degraded by the increase of N atoms with Si3N4 structure after the 2nd nitridation. |
| B4-14 | Title | A study on Si-based optical interconnection for system-on-chip |
|---|---|---|
| Author(s) | A. Yamada, M. Sakuraba and J. Murota | |
| Abstract | System-on-chip integration of optical interconnection has potential to break through the transmission delay in ultrafast LSIs. Si3N4 waveguides coupled with Si-PIN diodes was fabricated on SOI by standard silicon process. Photo-electric conversion and propagation characteristics were estimated by introducing light from a rounded-end optical fiber to the on-chip waveguide. The bending loss of 850nm light is about 0.2dB/bend with 10um radius. The minimum size of diode is found to be about 5um for photo-absorption. |