| B1-1 | Title | Invited Lecture: Origins of liquid crystal refractive indices |
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| Author(s) | J. Li, S. Gauza and Prof. S. T. Wu | |
| Abstract | Almost every liquid crystal (LC) device operating mechanism is based on the refractive index change. The LC refractive indices are mainly determined by the molecular constituents, wavelength, and temperature. Several models have attempted to address the wavelength and temperature dependencies of the LC refractive indices, but each has its own pros and cons. For example, the Vuks model is analogous to the classical Clausius-Mossotti equation for correlating the microscopic LC molecular polarizability to the macroscopic refractive indices. However, the wavelength and temperature effects are not described explicitly. In this paper, we will describe the origins of the LC refractive indices. Explicit expressions for the wavelength and temperature dependencies are derived. Using the wavelength model, we could optimize the index matching between the LC and photocurable polymer for a composite system. Using the temperature model, we have developed new liquid crystals with a large temperature-gradient refractive index for enhancing the performance of LC-infiltrated photonic crystal fibers. |
| B1-2 | Title | Invited Lecture: Surface Pinning Effect of Thin Polymer-dispersed Liquid Crystals |
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| Author(s) | Y. Lin, H. Ren, Y. H. Wu, X. Liang and S. T. Wu | |
| Abstract | Surface pinning effects on the phase separation dynamics, morphologies, and electro-optic properties of thin polymer-dispersed liquid crystal (PDLC) cells are investigated. Four types of surface alignment layers were studied: ITO only, Polyimide (PI) without rubbing, homogeneous cell, and 90º twisted nematic (TN) cell. The ITO-only and non-rubbed PI cells do not provide enough anchoring force to prevent LC droplets flow and coalesce. As a result, the droplets are larger and less uniform. For the homogeneous and TN cells with sufficiently high anchoring energy, almost all the nucleated LC droplets grow at a fixed position during phase separation. The appearance of the coalescence is not obvious and the formed LC droplets are relatively uniform. For the rubbed cells with polar anchoring energy >2x10-4J/m2, the droplet size is smaller and more uniform than those in the conventional PDLC cell. The phase separation dynamics determine the final composite morphology which affects the electro-optic properties of a PDLC device. The morphologies in the homogeneous and TN cells are similar, but the TN cell is polarization independent while the homogeneous cell is polarization dependent. Moreover, the TN-PDLC cell exhibits a higher contrast ratio. The light shutter made of TN-PDLC shows no haze and 5-10 ms response time. A reflective LCD using dye-doped TN-PDLC is demonstrated. |
| B1-3 | Title | A Transition Method from Splay to Bend Alignment using Twist disclination for OCB-mode LCDs |
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| Author(s) | K. Kuboki, T. Miyashita, T. Ishinabe and T. Uchida | |
| Abstract | Optically compensated bend (OCB) mode liquid crystal display (LCDs) require an initial transition from a splay alignment to a bend alignment before operation. We clarified that the twist disclination acted as a nucleus of the transition and also clarified the condition to form the nucleus of transition. In this paper, the transition was successfully induced by forming the nucleus of transition in an OCB cell using partial rubbing treatments or the micro protuberance. |
| B1-4 | Title | A High S/N Ratio CMOS Image Sensor with Column Parallel A/D Converter for Object Extraction |
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| Author(s) | T. Tate, S. Sugawa, K. Kotani and T. Ohmi | |
| Abstract | A new CMOS image sensor having the capabilities of the noise reduction, the column parallel at A/D conversion for object extraction at every 1ms and the high quality frame signal output at every 1/60s at the same time has been developed. The sensor pixel circuit is composed of a photodiode, a signal readout circuit with noise reduction function. The sensor is equipped with column-parallel sample-hold circuits and 10-columns-parallel A/D converters for object extraction. |
| B1-5 | Title | RF Si CMOS Amplifier for Wireless Communication |
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| Author(s) | K. Shimoyama, S. Kameda, H. Nakase, Y. Isota and K. Tsubouchi | |
| Abstract | We have already proposed a silicon radio frequency (RF) Class-B complementary push-pull power amplifier (PA) for third generation cellular phone system. The gain and power-added efficiency (PAE) of 0.35um Si n-channel metal oxide semiconductor field effect transistors (NMOSFETs) composing the proposed power amplifier has been evaluated 15dBm and 50%, respectively. In this paper, the lower parasitic resistance method was proposed for improvement of performance of PA. Using the proposed method, maximum gain and maximum PAE of designed NMOSFETS was obtained 15.3dBm and 78%, respectively. |
| B1-6 | Title | Design of the wide viewing angle LCD without grayscale inversion |
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| Author(s) | T. Higano, T. Ishinabe and T. Uchida | |
| Abstract | To achieve wide viewing angle LCDs, it is important to suppress a grayscale inversion. We investigated the mechanism of the grayscale inversion and analyzed the polarization state of light which passed through the LC-cell by using a Poincare Sphere method. As a result, we clarified the design rules of the wide viewing angle LCD without grayscale inversion. |
| B1-7 | Title | A New NBTI Lifetime Prediction Method for pMOSFETs with Ultra Thin Gate Films |
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| Author(s) | R. Kuroda, K. Watanabe, A. Teramoto, S. Sugawa and T. Ohmi | |
| Abstract | An accurate NBTI lifetime prediction method is developed. The degradation mechanisms are discussed and the impact of energy distribution of holes in the inversion layer is clarified. The results show that high gate voltage and temperature stresses are not suitable to predict lifetime because these stresses excite some inversion holes to high energy levels and cause excess degradations. Then a suitable acceleration method that does not employ these excess stresses is developed. A Vth shift model is developed based on the positive charge increase in the insulator. Using the acceleration method and model, we can predict the accurate NBTI lifetime. |
| B2-1 | Title | Invited Lecture: From Silicon Nanoelectronics to Nano Electromechanical Systems (NEMS) |
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| Author(s) | Asst. Prof. L. Montes | |
| Abstract | With the size reduction of the different features of microelectronic devices, we observe a clear evolution towards nanoelectronics, where new phenomena appear. While leading to physical limitations in classical MOS devices, phenomena such as tunneling and Coulomb blockade can be exploited to realize new devices. In this talk we present the fabrication of non-volatile floating gate and resonant tunneling memories with nano-silicon dots and their electrical characteristics. We then focus on the fabrication and electrical characterization of silicon nanowires using ultra-thin Silicon on insulator (SOI). We present a detailed study of the physical transport mechanisms for each structure. Finally, we present original concept for nano-electromechanical systems (NEMS). |
| B2-2 | Title | Invited Lecture: Reliability issues of thin film acoustic resonators for wireless applications |
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| Author(s) | B. Ivira | |
| Abstract | Nowadays, the trends of wireless communication systems are to integrate an increasing number of functions while reducing the size of systems. For cellular phone applications, a way of shrinkage consists in replacing the SAW (surface acoustic wave) and other ceramic filters with a new filtering modules based on the use of BAW (Bulk Acoustic Wave) resonators. The work is focused on reliability issues of both types of resonators: Film Bulk Acoustic Resonators (FBAR) and more particularly Solidly Mounted Resonators (SMR). Impacts of high humidity conditions, temperature cycling and storage are assessed by following structural and electrical feature drifts. Beside harsh environmental ageing, areas of thermal studies are conducted in different ways. The first one consists in evaluating resonators and associated filters thermal abilities to keep performances when they operate from low (down to 173 K) to high temperature (up to 400 K). Furthermore, self-heating induced by high level of RF signals is studied with a high spatial resolution infrared camera providing thermal mapping during power is applied. In addition, Finite Element Analysis (FEA) simulations are compared with infrared measurements. Such work aims to identify failure mechanisms poorly investigated until now for this kind of RF-MEMS. |
| B2-3 | Title | Current-Mode Serial-to-Parallel and Parallel-to-Serial Converter for Current-Mode OFDM FFT LSI |
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| Author(s) | Y. W. Park, S. K. Kim, S. Kameda, H. Nakase and K. Tsubouchi | |
| Abstract | OFDM is used for achieving a high-speed data transmission in mobile wireless communication systems. Conventionally, fast Fourier transform that is the main signal processing of OFDM is implemented using digital signal processing. The DSP FFT LSI requires large power consumption. Current-mode FFT LSI with analog signal processing is one of the best solutions for high speed and low power consumption. However, for the operation of current-mode FFT LSI that has the structure of parallel-input and parallel-output, current-mode serial-to-parallel and parallel-to-serial converter are indispensable. We propose a novel current-mode SPC and PSC and full chip simulation results agree with experimental data. |
| B2-4 | Title | High Quality Si3N4 Gate Dielectric For Sub-100nm ULSI Devices |
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| Author(s) | M. Higuchi, A. Teramoto, M. Komura, S. Shinagawa, E. Ikenaga, H. Nohira, K. Kobayashi, T. Hattori, S. Sugawa and T. Ohmi | |
| Abstract | The structure and the electrical property of Si3N4 grown by Xe/NH* plasma are studied. The sub-nitrides consist of Si+, Si2+ and Si3+ are evaluated by XPS. The total amount of sub-nitrides is 1.29 mono-layer, and this means that an abrupt transition appeares at Si3N4/Si interface. The C-V characteristics of the silicon nitrides formed at 400oC and 600 oC are also studied. Althogh Hysteresis in the C-V curve of the MIS capacitor having the Si3N4 grown at 400oC is observed after 600oC annealing accompanied by the increase of sub-nitrides, hysteresis and the increase of sub-nitrides after annealing are not appeared in the Si3N4 grown at 600oC. |
| B2-5 | Title | A Novel Bitline Direct Sense Circuit that uses a Feedback System for High-Speed Flash Memory |
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| Author(s) | T. Kadowaki, H. Nakamura, H. Sakuraba and F. Masuoka | |
| Abstract | In this paper, we propose a novel bitline direct sense circuit for high-speed Flash memory. Our proposed sense circuit controls the drivability of the bitline charging transistor by using a feedback system. This allows us to obtain high-speed bitline charging and readout. Despite an increase in circuit complexity, our proposed sense circuit produces a negligible increase in chip size. We also analyzed the possibility of oscillations in our feedback system and showed that our proposed sense circuit can operate stably. Therefore, our proposed sense circuit can realize high speeds and stable read operations for Flash memory. |
| B2-6 | Title | High Performance CMOS Devices using Accumulation-Mode Fully Depleted SOI MOSFETs for Analog Integrated Circuits |
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| Author(s) | W. Cheng, A. Teramoto, M. Hirayama, S. Sugawa and T. Ohmi | |
| Abstract | We improve the Fully Depletion SOI MOSFET performance using accumulation-mode device structure for analog integrated circuits applications. Comparison with the inversion-mode FD SOI, both of the normally-off accumulation-mode n-channel and p-channel FD SOI devices show higher current drivability and higher mobility. On the other hand, the accumulation-mode SOI devices suppress the kink effect much better than that in inversion-mode FD SOI devices at high bias condition for analog circuits. Lastly, the new CMOS device structures consist of inversion-mode nMOS and accumulation-mode pMOS can improve the integration degree and suppress the boron penetration from boron-doped poly-si gate electrode to channel. |
| B2-7 | Title | Vertical Si Pillar Fabricated by ECR Plasma Etching with Precise Control of O2 Flow Rate in Cl2 / O2 Mixtures |
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| Author(s) | T. Hidaka, H. Amikawa, H. Nakamura, H. Sakuraba and F. Masuoka | |
| Abstract | In this paper, we demonstrate that the vertical silicon pillar for Surrounding Gate Transistor (SGT) can be fabricated by using Electron Cyclotron Resonance (ECR) plasma etching with precise control of O2 flow rate in Cl2 / O2 mixtures. As the percentage of O2 is increased above 10%, the subtrench depth decreases gradually and approaches zero. However, as the percentage of O2 is increased further more, “grass” surrounding the vertical silicon pillar are formed. The results show that an optimal condition of the O2 percentage for successful silicon pillar fabrication is at 10%. |
| B2-8 | Title | High-k Gate Dielectric Films Formed by Plasma-Enhanced Metal-organic Chemical Vapor Deposition |
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| Author(s) | H. Wakamatsu, M. Higuchi, A. Teramoto and T. Ohmi | |
| Abstract | We developed PrSixNy/Si3N4 stacked gate dielectric suitable for the advanced metal-insulator-semiconductor field transistors (MISFETs). PrSixNy was deposited by a newly developed plasma-enhanced metal-organic chemical vapor deposition (PEMOCVD) on the high quality Si3N4. The hysteresis in C-V characteristics attributed to charge traps in the PrSixNy and Si3N4 films, and the leakage current of the staked dielectric films is decreased by forming in PEMOCVD with high density (> 1012 cm-2) and low ion bombardment energy (< 7eV) without excess decomposition of metal-organic precursors. These technologies are very promising for fabricating feature MISFETs with sub-100nm gate length. |
| B3-1 | Title | Invited Lecture: Metrology of Magnetization Dynamics in Micro/Nano Structures |
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| Author(s) | Dr. P. Kabos, T. M. Wallis, J. Moreland, W. Rippard, M. Pufall and S. Russek | |
| Abstract | We will discuss time base measurements of the magnetization dynamics in micro/nano structures. One method utilizes the magneto mechanical response of a mechanical microstructure due to a rapidly changing magnetization. The methods are analogous to the classical Einstein - de Haas experiment but at nanoscopic scales. Recently related techniques that use the selective transfer of the angular momentum and energy from the magnetization to the lattice through ferromagnetic resonance in a sample mounted on a cantilever have been demonstrated. We will also discuss another method based current driven magnetization dynamics during the spin momentum transfer in multilayered magnetic nanocontacts. |
| B3-2 | Title | Random wavelength accessible Mid-IR ZGP-OPO using a Galvano-controlled KTP-OPO |
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| Author(s) | K. Miyamoto, K. Suizu and H. Ito | |
| Abstract | We report on the demonstration of a rapidly wavelength tunable Mid-IR ZGP-OPO. While the ZGP crystal angle remains fixed, the Mid-IR wavelength is tuned by varying the KTP-OPO pumping wavelength. The KTP crystals were controlled by using Galvano-optical beam scanner. Our Mid-IR source can jump to a different wavelength without scanning through intermediate wavelengths. |
| B3-3 | Title | Magnetization reversal and switching field in CoPt/Ru patterned films |
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| Author(s) | K. Mitsuzuka, T. Shimatsu, N. Kikuchi, J. C. Lodder and H. Muraoka | |
| Abstract | Dot arrays with diameter D =80-245 nm are made of Co80Pt20 (20 nm)/Ru films, and magnetic properties of the dots were examined for a fundamental study of patterned media. Coercive force increased as the D decreased, and showed 7.6 kOe at D=80 nm. The switching volume for the array of D=140 nm dots was estimated to be only about 5 % of the dot volume. However, the MFM images revealed that all dots show single domain state during the magnetization reversal. It is likely that the reversal process starts from a nucleation at the center of the dot followed by propagation process. |
| B3-4 | Title | Magnetic properties of YIG(Y3Fe5O12) thin films prepared by the post annealing of amorphous films deposited by rf-magnetron sputtering |
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| Author(s) | Y. M. Kang and S. I. Yoo | |
| Abstract | Amorphous YIG films were successfully deposited on two different substrate of thermally oxidized Si(100) and Gd3Ga5O12(GGG)(111) substrates by rf-magnetron sputtering at room temperature, and subsequently crystallized by post annealing (600 ~ 900oC) in two different oxygen atmospheres of air and 500 ppm O2. While post-annealed YIG films on GGG substrates were well-textured, those on Si(100) were randomly oriented. High-quality YIG films could be better obtained in the reduced (500 ppm O2) oxygen atmosphere than air since more effective YIG growth during annealing process and lower FMR linewidth of films could be achieved. |
| B3-5 | Title | Development of high performance frequency chirped lasers |
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| Author(s) | C. Ndiaye, T. Hara and H. Ito | |
| Abstract | The oscillation characteristics of a frequency-shifted feedback laser using a semiconductor optical amplifier as the gain medium in a free-space ring cavity are reported. Oscillation bandwidths broader than 100 GHz and continuous electronic tunability from 1520 to 1580 nm are reported. In reflectometry, we have achieved measurement accuracies of few micrometers at distances greater than 1m. |
| B3-6 | Title | Fabrication of CPP-GMR spin valves using EB assisted CVD hard masks |
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| Author(s) | S. Isogami, Y. M. Kang, M. Tsunoda and M. Takahashi | |
| Abstract | We had already reported that fabrication of MTJs with the smallest size of 30nmφ was possible using EB assisted CVD head masks during their Ar ion etching process. Besides, it is noteworthy that such 30nmφ is the smallest size in the world at present. This time, we tried to apply our developed process to CPP-GMR spin valve fabrication. As our developed fabrication methods are all physical process, CPP-GMR spin valves were not chemically damaged. In evidence of that result, we could obtain appropriate GMR properties, which were the MR ratio of around 1% and the RA (resistance and area) product of 11mΩμm2 in conventional type elements. |
| B3-7 | Title | CoPtCr-SiO2 media with Ku2 magnetic anisotropy term fabricated with Pd seed layers |
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| Author(s) | H. Sato, T. Shimatsu, O. Kitakami and H. Muraoka | |
| Abstract | CoPtCr-SiO2 media with the second energy term of the uniaxial anisotropy, Ku2, were fabricated using Pd seed layers. It is theoretically predicted that Ku2 term enhances thermal stability of media without a notable change in recording irritability, and we found that the use of Pd seed layer is effective to increase the Ku2 value. Moreover, the addition of N2 to Ar gas during the deposition of the Pd seed layer was found to reduce the grain size of CoPtCr and enhance the grain segregation. It is likely that the use of Pd+N2 seed layers is effective to realize the Ku2 media for high density recording. |
| B3-8 | Title | Diffusion analyses of non-ferromagnetic element in the cap-layer of post-annealed CoCrPt perpendicular media |
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| Author(s) | N. Itagaki, S. Saito and M. Takahashi | |
| Abstract | For low noise of HD media, post-anneal is effective to form non-ferromagnetic boundaries. I found the factors that dominate diffusion phenomena in post-annealed CoCrPt media with various cap-layer elements X. Hf- and Zr-capped media were found to show low diffusion temperature and have thin reacted layer. These results are explained with following relationships revealed by detailed analyses of diffusion: 1) X with high melting point in cap-layer hardly starts boundary diffusion and interdiffusion, 2) X-capped media with higher melting point of CoX compound forms thinner reacted layer, 3) X with low enthalpy of Co-X formation lead to low diffusion temperature. |
| B3-9 | Title | Thermal stability and recording writability of Hard/Soft stacked perpendicular media |
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| Author(s) | Y. Inaba, T. Shimatsu, O. Kitakami and H. Muraoka | |
| Abstract | We proposed hard/soft-stacked perpendicular media in order to improve recording writability without notable changes in thermal stability and noise performance. Hard/soft-stacked media consist of magnetically hard and soft layers within each grain, and the total thickness of the two layers was set to be smaller than the coherent length of magnetization. It was revealed that the stacked structure reduces the dynamic coercivity by 2 kOe, resulting in a reduction in recording current. We successfully demonstrated that the hard/soft-stacked media show a better recording writability with no notable change in noise performance or thermal stability. |
| B4-1 | Title | Novel Al/NiP Substrates with Single-domain Soft Magnetic Underlayer -Development of nano-/oriented-crystalline plated SUL for process reduction - |
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| Author(s) | A. Hashimoto, S. Saito, M. Takahashi and Nobuaki Mukai | |
| Abstract | To achieve a single-domain structure over a whole disk for a thick soft magnetic underlayer (SUL) pinned by an antiferromagnetic (AFM) layer with simple fabrication processes, we propose a novel substrate with SUL containing function of control of sputter-deposited crystalline layer. Through development of control of microstructure and crystal orientation of a plated SUL, substrate with nano-/oriented-crystallized NiFe was realized. Using the both substrates with nano-/oriented-crystalline SUL, high thermal stability of single-domain structure could be realized in a top-type pinning structure. |
| B4-2 | Title | An experimental study of the influence of thermal relaxation on readback signal in perpendicular magnetic recording |
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| Author(s) | M. Hashimoto, K. Miura and H. Muraoka | |
| Abstract | The influence of thermal relaxation on the readback waveforms from perpendicular magnetic recording media was experimentally investigated. The signal decay rate at the transition was smaller than that in between the transitions, reflecting the demagnetization field distribution. The time dependence of the noise in the waveform was characterized as pulse width, transition jitter, and pulse width fluctuations. While the transition width decreased with time, the jitter and pulse width fluctuations were stable. These time-dependant results could be interpreted by considering the demagnetizing field distribution, which govern the random magnetization domain reversals. |
| B4-3 | Title | Structure and Magnetism for MnTe Sputtered Films |
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| Author(s) | Y. Ashizawa, S. Saito, M. Tsunoda and M. Takahashi | |
| Abstract | Much attention has been attracted to zinc-blende or wurtzite Mn-based magnetic semiconductors from a viewpoint of creation of spintronic devices with both the characters of “spin” and “charge” in carriers. The wurtzite phase has been known to only the hypothetical phase in equiatomic Mn-Te compounds. In this research, we succeeded in synthesis of the wurtzite MnTe phase by co-sputtering with lattice parameters a and c of 0.446 nm and 0.731 nm, respectively. It was clarified the new material was antiferromagnetic substance with Néel temperature, asymptotic Curie temperature, and Curie-Weiss constant of 60 K, -615 K, and 0.10, respectively. |
| B4-4 | Title | Study on B2 structure epitaxial Fe/Co superlattice as the different deposition methods |
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| Author(s) | I. C. Chu, M. Doi and M. Sahashi | |
| Abstract | In our study, we prepared the samples of B2 structure epitaxial Fe/Co with different substrate temperature in order to investigate the relation between substrate temperature and structural properties. We verified the structural properties of Fe/Co by in-situ RHEED as increase the number of monolayer and obtained the result of gradual Fe/Co lattice parameter decrease. Moreover we identified that the B2 ordered phase Fe/Co with suitable substrate temperature by RHEED and XRD. The final main purpose of our research is to make sure if the epitaxial structure of B2 ordered phase Fe/Co dose good or not in CPP. |
| B4-5 | Title | Magnetic Properties of Ferromagnetic Alloy with Negative Uniaxial Magnetocrystalline Anisotropy |
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| Author(s) | D. Hasegawa, T. Ogawa and M. Takahashi | |
| Abstract | Dynamic magnetic properties of ferromagnetic material have attracted much attention for possible application to a high frequency device in GHz band, and increase in the ferromagnetic resonance frequency (fr) should be indispensable. In this study, we focused on the material with negative uniaxial magnetocrystalline anisotropy (Kugrain) and have systematically investigated Kugrain, Ms, DC technical magnetization process and dynamic magnetization process of c-plane oriented thin film of Co based alloy with negative Kugrain. |
| B4-6 | Title | Synthesis and magnetic moment of bct and fct Fe-N with various unit-cell volume |
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| Author(s) | K. Sunaga, M. Tsunoda and M. Takahashi | |
| Abstract | Bct and fct Fe-N with various N contents were fabricated on MgO single-crystal substrates with using reactive sputtering. The structural analisys and magnetic measurment were carried out. The results can be summarized as follows: 1) Bct and fct Fe-N with N content up to 33 at% is formed by using reactive sputtering. 2) Average magnetic moment of Fe decreases with increment of the unit-cell volume of bct Fe-N. 3) Average magnetic moment of Fe increases with increment of the unit-cell volume of fct Fe-N. |
| B4-7 | Title | Invited Lecture: Photonic nanostructure optoelectronic devices |
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| Author(s) | Prof. T. Baba | |
| Abstract | Photonic nanostructures are categorized into photonic crystals (PCs) and high index contrast structures (HIC). The PCs are artificial multidimensional periodic microstructures, which can be precisely designed by the photonic band theory. They have great potentials for various novel optoelectronic devices due to their photonic bandgap and peculiar dispersion characteristics. In this presentation, fundamentals to possible unique applications of PCs will be overviewed. Besides, HIC waveguides and cavities will also be discussed as competitive devices to PC ones. They are more suitable for the simple optical wiring and dense integration. |
| B4-8 | Title | Development of an Enhanced-Phase-Detection-Type Magnetic Field Sensor using a High-Frequency-Carrier |
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| Author(s) | T. Ozawa, C. Yokota, S. Yabukami, K. Ishiyama and K. I. Arai | |
| Abstract | The impedance of a magnetic thin film changes when a magnetic field is applied. The high-frequency-carrier magnetic field sensor, also called a GMI sensor, employs this phenomenon as its principle. We directed our attention to the change in the phase characteristic, and measured the magnetic field by measuring the phase of the high-frequency-carrier magnetic field. Although the high-frequency-carrier magnetic field sensor is optimized for impedance detection, it is not appropriate for measuring the magnetic field by detecting the phase difference. To improve its sensitivity in this respect, we developed an enhanced-phase-difference-detection-type magnetic field sensor. |
| B4-9 | Title | Electron Mobility Enhancement in SGT in the Strong Inversion Region |
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| Author(s) | W. Sakamoto, H. Haneda, H. Sakuraba, H. Nakamura and F. Masuoka | |
| Abstract | In this paper we successfully demonstrate that the electron mobility in the surrounding gate transistor (SGT) is significantly higher than the electron mobility produced by the planar MOSFET. In the SGT structure, it is possible to induce inversion charges under a lower vertical electric field and hence substantially enhance the electron mobility. We have derived that the electron mobility in the SGT, defined with a uniform doping of NA=1x1017 cm-3 and a silicon pillar diameter of 2R=10nm, is 53.4% higher than that of the planar MOSFET when the inversion charge density Qn=1x10-7 C/cm2 is induced. |
| B4-10 | Title | Dielectric strip line for THz waveguide |
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| Author(s) | Y. Ohta, Y. Suzuki and H. Ito | |
| Abstract | THz wave located between light and radio frequencies are important in spectroscopy and sensing. Many sources have been studied and developed. However, there are not so much efficient THz waveguide have been reported. Although metal wire, plastic ribbon waveguide, holly fiber are proposed and demonstrated, it is necessary to reduce the size and the fabrication for the development of compact circuit type devices. Here, we report the demonstration of THz waveguide using silicon which has a possibility of circuit fabrication. |