Projects / Themes (Group A)
Group A |
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| Research Target: To develop semiconductors, storage, optical and display devices with super high performance (i.e., high density, high speed, high functionality, low power consumption, etc.) and to develop the fundamentals of information communication devices and theories behind the information systems to be used in 10 years time. | ||
| Prof. Keiichi Edamatsu (Research Institute of Electrical Communication) | ||
| Theme | Quantum Information Technology utilizing Multiple Entangled Photons | |
| Objectives | To develop efficient source for multiple entangled photons: Entanglement recovery protocols / Quantum information using multiple entanglements, Quantum state transfer from photons to electron spins in semiconductors : Quantum memories, Quantum repeaters | |
| Prof. Hiroaki Muraoka (Research Institute of Electrical Communication) | ||
| Theme | Terabit Perpendicular Magnetic Recording for High Capacity Storage System | |
| Objectives | To develop future perpendicular magnetic recording technology with new read/write devices, head and disk, and to aim at high areal density recording of 2 Tbits/inch2, which corresponds to the bit size of 18nm by 18nm. | |
| Prof. Hideo Ohno (Research Institute of Electrical Communication) | ||
| Theme | Functional devices with spin dynamics | |
| Objectives | We focus on the dynamics and its manipulation of carrier spins, nuclear spins, and magnetic spins in semiconductor structures, to realize new functional devices with a spin degree of freedom. | |
| Prof. Yasuo Cho (Research Institute of Electrical Communication) | ||
| Theme | Scanning nonlinear dielectric microscopy with atomic resolution and its application to next generation ferroelectric high density data storage | |
| Objectives | To develop super high resolution SNDM for measuring atomic dipole distribution of condensed matter and its application to high speed and high density ferroelectric data storage. | |
| Prof. Michio Niwano (Research Institute of Electrical Communication) | ||
| Theme | Creation of Next-Generation Nano-electronic Devices of Energy-Saving Type | |
| Objectives | To develop | |
| Visiting Prof. Tatsuo Uchida (Graduate School of Electronic Engineering) | ||
| Theme | Super high performance display system for the next generation | |
| Objectives | To develop the advanced alignment control technology, polarized light control (PLC) theory and diffused light control (DLC) theory to realize high quality display with super-low-power consumption, and establish high-performance display system for the next generation. | |
| Prof. Rikizo Hatakeyama (Graduate School of Electronic Engineering) | ||
| Theme | Nanodevice-oriented nanoscopic plasma process control | |
| Objectives | Foundation of nano information-electronics using nanocarbon network: Create new-functional nanostructures for air-stable pn junction, NDR, magnetic semiconductor, electrooptic fusion, wiring,... | |
| Prof. Migaku Takahashi (New Industry Creation Hatchery Center) | ||
| Theme | Tailor-made nano-structured material for highly qualified spin related devices | |
| Objectives | To achieve highly qualified spin related devices such as ultra-high density magnetic recording media, high sensitivity spin-valve head and other magnetic devices for high frequency use through newly developed hopeful material design and precisely controlled dry and/or wet processes | |
| Prof. Junichi Kushibiki (Graduate School of Electrical and Communication Engineering) | ||
| Theme | Development of a new materials characterization technology by super-accurate ultrasonic measurements | |
| Objectives | To develop a new evaluation method of promising materials for the future optoelectronics devices and for the future extreme ultraviolet lithography (EUVL) systems by the ultrasonic micro-spectroscopy (UMS) technology | |
| Prof. Junichi Murota (Research Institute of Electrical Communication) | ||
| Theme | Creation of Atomically Controlled Processing of Group IV Semiconductors and its Application to Nanometer-scale Heterodevices | |
| Objectives | To develop 10 nm Scale Quantum Nano Devices with Strain Controlled Nano Scale Patterned Heterostructure of Group IV Semiconductors | |