Group B: 4key Devices

Room Miyagino


Tuesday, November 4, 2003

Session B1: Optical Device

Chair: Prof. Hiromasa Ito, Ito Laboratory

Time Title
9:30 Greeting Talks
Prof. M. Takahashi (B Group Leader)
9:40 B1-1 Invited Lecture:Multiple beam interferometry: new thoughts on an old subject
Prof. Frank V. Kowalski

Colorado School of Mines, USA
10:25 Five-Minute Intermission

Chair: Research Associate Koji Suizu, Ito Laboratry

Time Title
10:30 B1-2 Coherent Anti-Stokes Raman Spectrometer for THz-Frequency Modes in Biomolecules
S.L. Zhao, J. Shikata, M. Nakazawa, T. Matsumoto and H. Ito
Ito Laboratory
10:45 B1-3 Periodic Poling of LiNbO3 Crystal for Novel Optical Communication Devices
Yoshie Ohta, Tomohisa Sato, Takeshi Sato, Yuzo Sasaki, Hiromasa Ito
Ito Laboratory
11:00 B1-4 Frequency shifted feedback lasers and applications
Cheikh Ndiaye, Hiromasa Ito
Ito Laboratory
11:15 B1-5 Five-Minute Intermission

Chair: Associate Prof. Jun-ichi Shikata, Ito Laboratry

Time Title
11:20 B1-6 Invited Lecture: Coherent Detection Schemes for Three-Dimensional Tomographic Imaging
Prof. Kinpui Chan
Yamagata University, Japan

Session B2: Storage Device

Chair:Reserch Associate Hiroshi Yamada, Nakamura Laboratory

Time Title
13:00 B2-1 Invited Lecture: Engineering challenges for future disc drives
Associate Prof. Simon Greaves
Tohoku University
13:45 Ten-Minute Intermission

Chair: Associate Prof. Masakiyo Tsunoda, Takahashi Laboratory

Time Title
13:55 B2-2 Fe-based nanoparticles produced by chemical synthesis
W. Pei, I. Ohta, S. Sakibe and M. Takahashi
Takahashi Laboratory
14:10 B2-3 Reduced Surface Roughness and Increased Lateral Grain Size in Metallic Thin Films by Post IR-heat Treatment
Kenichi Imakita, Masakiyo Tsunoda and Migaku Takahashi
Takahashi Laboratory
14:25 B2-4 Orientational dependence of exchange anisotropy of Mn-Ir/Co-Fe epitaxial bilayers
Takashi Sato, Masakiyo Tsunoda, and Migaku Takahashi
Takahashi Laboratory
14:40 B2-5 Reduction of magnetic interaction in Co(B)/Pd multilayer perpendicular media using phase separated PdSi-O underlayer
H. Domon, D. D. Djayaprawira, and M. Takahashi
Takahashi Laboratory
14:55 B2-6 Resolution Improvement of Transition with Shielded Single Pole Writer
W. Xia, H. Muraoka, H. Aoi and Y. Nakamura
Nakamura Laboratory
15:10 Ten-Minute Intermission

Chair: Research Fellow Masahiko Sendoh, Arai Laboratory

Time Title
15:20 B2-7 Structure and Magnetic Properties of Mn-Si-C Sputtered Films
Yoshito Ashizawa, Yuji Suzuki, Shin Saito and Migaku Takahashi
Takahashi Laboratory
15:35 B2-8 The Formation and Stability and Magnetism of α′Phase in Fe-(B, C, N) Films
Kazuyuki Sunaga, Masakiyo Tsunoda, and Migaku Takahashi
Takahashi Laboratory
15:50 B2-9 Wireless Magnetic Micro-Machine with Magnetic Thin Film
Aya Yamazaki, Masahiko Sendoh, Kazushi Ishiyama, Ken Ichi Arai, Ryutaro Kato, Masaki Nakano and Hirotoshi Fukunaga
Arai Laboratory
16:05 B2-10 High frequency carrier-type thin film sensor by phase difference measurement
T. Ozawa, H. Mawatari, S. Yabukami, K.I. Arai
Arai Laboratory


Wednesday, November 5, 2003

Session B3: Display Device

Chair: Associate Prof. Shigeo Sato, Nakajima Laboratory

Time Title
10:20 B3-1 Invited Lecture
Prof. Deng-Ke Yang

Kent State University, Ohio, USA
11:05 Ten-Minute Intermission

Chair: Associate Prof. Shigeo Sato, Nakajima Laboratory

Time Title
11:15 B3-2 Novel Screen Technology for High Contrast Front Projection Display by Optimizing the Projected Light Angle Range
B.Katagiri, T.Ishinabe, T.Miyashita and T.Uchida
Uchida Laboratory
11:30 B3-3 Analysis and Control of Splay-to-Bend Trnasition in OCB-Mode
Ken Kuboki, Tetsuya Miyashita, Takahiro Ishinabe, and Tatsuo Uchida
Uchida Laboratory
11:45 B3-4 The new concept of optical design for a wide-viewing-angle liquid crystal display without grayscale inversion
T. Higano, T. Ishinabe, T. Miyashita and T. Uchida
Uchida Laboratory

Session B4: Semiconductor Device

Chair: Research Associate Kameda Suguru, Tsubouchi Laboratory

Time Title
13:00 B4-1 Invited Lecture: MEMS -- Now and Future      Milestones, Roadblocks, c New Routes?
Prof. Richard S. Muller

University of California at Berkley, USA
13:40 Five-Minute Intermission

Chair: Research Associate Kameda Suguru, Tsubouchi Laboratory

Time Title
13:45 B4-2 The design of programmable interconnect architecture for a dynamically
reconfigurable LSI - the Flexible Processor

Takeshi Ohkawa, Amir Jamak, Koji Kotani and Tadahiro Ohmi
Ohmi Laboratory
14:00 B4-3 Face Recognition Algorithm Using Vector Quantization Histogram Method
Qiu Chen, Koji Kotani, and Tadahiro Ohmi
Ohmi Laboratory
14:15 B4-4 High-performance MOS Devices on Si(110) Oriented Surface
Tatsufumi Hamada, Tomoyuki Suwa, Masaaki Higuchi, Akinobu Teramoto, Masaki Hirayama, and Tadahiro Ohmi
Ohmi Laboratory
14:30 B4-5 A Study of a Domain Oriented Dynamically Reconfigurable Processor for Short-TAT Verification
- A Case of FFT-centric Aplications -

Naoto Miyamoto, Leo Karnan, Kazuyuki Maruo, Koji Kotani, and Tadahiro Ohmi
Ohmi Laboratory
14:45 B4-6 AlN Epitaxial Film on 6H-SiC(0001) Using MOCVD for GHz-Band SAW Devices
K. Uehara, C.M. Yang, T. Furusho, H. Nakase, S. Kameda, S.K. Kim, S. Nishino and K. Tsubouchi
Tsubouchi Laboratory
15:00 B4-7 High C-Axies-Oriented AlN Film Using MOCVD for 5GHz-Band FBAR Filter
C.-M. Yang, K.Uehara, S.-K. Kim S.Kameda, H,Nakase, and K.Tsubouchi
Tsubouchi Laboratory
15:15 B4-8 Packet SS-CDMA system:Highly precise carrier frequency offset compensation
Atsuyoshi Yamaguchi, Jun Takagi, Hiroshi Oguma, Seong-Kweon Kim, Suguru Kameda, Hiroyuki Nakase, Yoji Isota, and Kazuo Tsubouchi
Tsubouchi Laboratory
15:30 Five-Minute Intermission

Chair: Research Associate Hiroshi Sakuraba, Masuoka Laboratory

Time Title
15:35 B4-9 Surrounding Gate type MOS Capacitor Using 0.4um MOS Technology
Makoto Iwai, Hitoshi Ohta, Masahiko Suzuki, Hiroshi Sakuraba, Tetsuo Endoh and Fujio Masuoka
Masuoka Laboratory
15:50 B4-10 NAND DRAM with Surrounding Gate Transistor (SGT)-type gain cell
Hiroki Nakamura, Tetsuo Endoh, Hiroshi Sakuraba, and Fujio Masuoka
Masuoka Laboratory
16:05 B4-11 Analysis of Soft Errors in Floating Channel type Surrounding Gate Transistor (FC-SGT) DRAM Cells
Fumiyoshi Matsuoka and Fujio Masuoka
Masuoka Laboratory
16:20 B4-12 Reduction of Pass-Gate Leakage by Silicon-Thickness Thinning in Double-Gate MOSFETs
Wataru Sakamoto, Tetsuo Endoh, Hiroshi Sakuraba, and Fujio Masuoka
Masuoka Laboratory
16:35 B4-13 Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH3 and SiH4
Youngcheon Jeong, Masao Sakuraba and Junichi Murota
Murota Laboratory
16:50 B4-14 A study on Si-based optical interconnection for system-on-chip
A. Yamada, M. Sakuraba and J. Murota
Murota Laboratory