学術論文

2024

1. Kai Takeuchi, Tadatomo Suga, and Eiji Higurashi, Room temperature wafer bonding through conversion of polysilazane into SiO2, Scientific Reports, vol. 14, p. 1267 (2024), DOI: 10.1038/s41598-024-51800-6

2023

1. Masahide Goto, Yuki Honda, Masakazu Nanba, Yoshinori Iguchi, Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto, IEEE Transactions on Electron Devices, vol. 70, no. 9, 4705-4711 (2023), DOI: 10.1109/TED.2023.3298308.
2. Kai Takeuchi, Junsha Wang, Beomjoon Kim, Tadatomo Suga, and Eiji Higurashi, Room temperature bonding of Au assisted by self-assembled monolayer, Applied Physics Letters, vol. 122, no. 5, 051603 (2023), DOI: 10.1063/5.0128187.

2022年

1. Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Yusuke Shirayanagi, Shuichi Hiza, Kunihiko Nishimura, Eiji Higurashi, Room temperature bonding of GaN and diamond substrates via atomic layer, Scripta Materialia, 215, 114725 (2022), DOI: 10.1016/j.scriptamat.2022.114725.
2. Shoya Fukumoto, Takashi Matsumae, Yuuichi Kurashima, Hideki Takagi, Masanori Hayase, Eiji Higurashi, Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H2SO4/H2O2 mixture and NH3/H2O2 mixture, Japanese Journal of Applied Physics, vol. 61, no. SF, SF1005 (2022), DOI: 10.35848/1347-4065/ac5421.
3. Shingo Kariya, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Masanori Hayase, and Eiji Higurashi, Simple and low-temperature vacuum packaging process by using Au/Ta/Ti metal multilayer, Japanese Journal of Applied Physics, Japanese Journal of Applied Physics, vol. 61, no. 5, 051004 (2022), DOI: 10.35848/1347-4065/ac52b8.
4. Shingo Kariya, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Masanori Hayase, and Eiji Higurashi, Bonding formation and gas absorption using Au/Pt/Ti layers for vacuum packaging, Microsystems & Nanoengineering, vol. 8, 2 (2022), DOI: 10.1038/s41378-021-00339-x.
5. Kai Takeuchi and Tadatomo Suga, Quantification of wafer bond strength under controlled atmospheres, Japanese Journal of Applied Physics, Japanese Journal of Applied Physics, 61, SF1010 (2022)
6. Ying Meng, Yang Xu, Runhua Gao, Xinhua Wang, Xiaojuan Chen, Sen Huang, Ke Wei, Dahai Wang, Haibo Yin, Kai Takeuchi, Tadatomo Suga, Fengwen Mu, and Xinyu Liu, Low-temperature bonding of surface-activated polyimide to Cu Foil in Pt-catalyzed formic acid atmosphere, Journal of Materials Science: Materials in Electronics, 33, 2582–2589 (2022)
7. Kai Takeuchi, Nobuyuki Takama, Kirti Sharma, Oliver Paul, Patrick Ruther, Tadatomo Suga, and Beomjoon Kim, Microfluidic chip connected to porous microneedle array for continuous ISF sampling, Drug Delivery and Translational Research, 12, 435–443 (2022)

2021年

1. Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Eiji Higurashi, Low-temperature direct bonding of SiC and Ga2O3 substrates under atmospheric conditions, Journal of Applied Physics, vol. 130, no. 8, 085303 (2021), DOI: 10.1063/5.0057960.
2. Takashi Matsumae, Ryo Takigawa, Yuichi Kurashima, Hideki Takagi, Eiji Higurashi, Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions, Scientific Reports, vol. 11, 11109 (2021), DOI: 10.21203/rs.3.rs-266836/v1.
3. Yuichi Kurashima, Takashi Matsumae, Eiji Higurashi, Sinya Yanagimachi, Takaaki Kusui, Mitsuhiro Watanabe, Hideki Takagi, Application of thin Au/Ti double-layered films as both low-temperature bonding layer and residual gas gettering material for MEMS encapsulation, Microelectronic Engineering, vol. 238, 111513 (2021) , DOI: 10.1016/j.mee.2021.111513.
4. Lei Li, Tomohiro Obata, Aozora Fukui, Kai Takeuchi, Tadatomo Suga, Atsushi Tanaka, Akio Wakejima, Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics, Applied Physics Express, 14, 091002 (2021)
5. Kai Takeuchi, Fengwen Mu, Akira Yamauchi, and Tadatomo Suga, Sequential Plasma Activation for Low Temperature Bonding of Aluminosilicate Glass, ECS Journal of Solid State Science and Technology, 10, 054007 (2021)
6. K. Takeuchi, F. Mu, Y. Matsumoto, and T. Suga, Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer, Advanced Materials Interfaces, 2001741 (2021)

2020年

1. Shoya Fukumoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Masanori Hayase, and Eiji Higurashi, Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning, Applied Physics Letters, vol. 117, no. 20, 201601 (2020), DOI: 10.1063/5.0026348.
2. Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, and Eiji Higurashi, Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions, Scripta Materialia, vol. 191, pp. 52-55 (2021), DOI: 10.1016/j.scriptamat.2020.09.006.
3. Takashi Matsumae, Mu Fengwen, Shoya Fukumoto, Hisanori Hayase, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi, and Tadatomo Suga, Heterogeneous GaN-Si integration via plasma activation direct bonding, Journal of Alloys and Compounds, vol. 852, 156933 (2021), DOI: 10.1016/j.jallcom.2020.156933.
4. Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Kazunori Nishizono, Tsutomu Amano, and Eiji Higurashi, Room-Temperature Bonding of Aluminum Nitride Ceramics and Semiconductor Substrates, Ceramics International, vol. 46, no. 16, Part A, pp. 25956-25963 (2020), DOI: 10.1016/j.ceramint.2020.07.083.
5. Naoki Nakatani, Yuki Honda, Masahide Goto, Toshihisa Watabe, Masakazu Nanba, Yoshinori Iguchi, Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto, Fabrication of Multi-Stacked Integrated Circuit for High Performance Image Sensors, Transactions of The Japan Institute of Electronics Packaging, vol. 13, E20-004 (2020), DOI: 10.5104/jiepeng.13.E20-004-1.
6. Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Seiichi Takamatsu, Toshihiro Itoh, and Eiji Higurashi, Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding, Micromachines, vol. 11, no. 5, 454 (2020), DOI: 10.3390/mi11050454.
7. Ryo Takigawa, Takashi Matsumae, Michitaka Yamamoto, Eiji Higurashi, Tanemasa Asano and Haruichi Kanaya, Demonstration of GaN/LiNbO3 Hybrid Wafer Using Room-Temperature Surface Activated Bonding, ECS Journal of Solid State Science and Technology, vol. 9, no. 4, 045005 (2020), DOI: 10.1149/2162-8777/ab8369.
8. Michitaka Yamamoto, Yutaka Kunimune, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Yoshinori Iguchi, Yuki Honda, Tadatomo Suga, Toshihiro Itoh, Eiji Higurashi, Room-temperature pressureless wafer scale hermetic sealing in air and vacuum using surface activated bonding with ultrathin Au films, Japanese Journal of Applied Physics, vol. 59, no. SB, SBBB01 (2020), DOI: 10.7567/1347-4065/ab54d6.
9. Fengwen Mu, Bin Xu, Xinhua Wang, Runhua Gao, Sen Huang, Ke Wei, Kai Takeuchi, Xiaojuan Chen, Haibo Yin, Dahai Wang, Jiahan Yu, Tadatomo Suga, Junichiro Shiomi, and Xinyu Liu, A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance, Journal of Alloys and Compounds, 905, 164076 (2020)
10. Kai Takeuchi, Nobuyuki Takama, Rie Kinoshita, Teru Okitsu, and Beomjoon Kim, Flexible and Porous Microneedles of PDMS for Continuous Glucose Monitoring, Biomedical Microdevices, 22, 79 (2020)

2019年

1. Ryo Takigawa, Eiji Higurashi, and Tanemasa Asano, Ultrathin adhesive layer between LiNbO3 and SiO2 for bonded LNOI waveguide applications, Japanese Journal of Applied Physics, vol. 58, no. SJ, SJJE06 (2019), DOI: 10.7567/1347-4065/ab24b6.
2. Yuki Honda, Masahide Goto, Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi, Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, and Toshiro Hiramoto, Triple-Stacked Au/SiO2 Hybrid Bonding With 6-μm-Pitch Au Electrodes on Silicon-on-Insulator Substrates Using O2 Plasma Surface Activation for 3-D Integration, IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 9, no. 9, pp. 1904-1911, (2019), DOI: 10.1109/TCPMT.2019.2910863.
3. 山本道貴, 松前貴司, 倉島優一, 高木秀樹, 須賀唯知, 伊藤寿浩, 日暮栄治, 極薄Au薄膜を用いたウェハスケール・大気中常温接合のためのプラズマ処理方法の検討, 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）, vol. 139, no. 7, pp. p.217-218, (2019), DOI: 10.1541/ieejsmas.139.217.
4. Takashi Matsumae, Yuichi Kurashima, Eiji Higurashi, and Hideki Takagi, Surface activated bonding of Au/Cr, Au/Ta and Au/Pt/Ti films after degas annealing for Si/Sapphire gas cell, Microelectronic Engineering, vol. 214, pp. 68-73, (2019), DOI: 10.1016/j.mee.2019.04.026.
5. T. Matsumae, Y. Kurashima, E. Higurashi, and H. Takagi, Direct Bonding of an Electroformed Cu Substrate and Si Chip at Room Temperature under Atmospheric Conditions, ECS Journal of Solid State Science and Technology, vol. 8, no. 4, pp. 253-257 (2019), DOI: 10.1149/2.0051904jss, Bruce Deal and Andy Grove Young Author Award Winning Paper.
6. Ryohei Hokari, Kazuma Kurihara, Eiji Higurashi, Hiroshi Hiroshima, Optical evaluation of nanocomposite metamaterials fabricated by nano-printing technique utilizing silver nanoink, Microelectronic Engineering, vol. 211, pp. 44-49 (2019), DOI: 10.1016/j.mee.2019.03.024.
7. Michitaka Yamamoto, Takeshi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Toshihiro Itoh, and Eiji Higurashi, Growth Behavior of Au Films on SiO2 Film and Direct Transfer for Smoothing Au Surfaces, International Journal of Automation Technology (IJAT), vol. 13 no. 2, pp. 254-260, (2019), DOI: 10.20965/ijat.2019.p0254.
8. Ryo Takigawa, Toru Tomimatsu, Eiji Higurashi and Tanemasa Asano, Residual stress in Lithium Niobate film layer of LNOI/Si hybrid wafer fabricated using low-temperature bonding method, Micromachines, vol. 10, no. 2, 136, pp. 1-8 (2019), DOI: 10.3390/mi10020136.
9. Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Toshihiro Itoh, and Eiji Higurashi, Comparison of argon and oxygen plasma treatments for ambient room-temperature wafer-scale Au-Au bonding using ultrathin Au films, Micromachines, vol. 10, no. 2, 119, pp. 1-12 (2019), DOI: 10.3390/mi10020119.
10. 申盛斌, 日暮栄治, 古山洸太, 山本道貴, 須賀唯知, 水素ラジカル処理した銅表面のX線光電子分光法(XPS)による酸化挙動解析 (X-ray Photoelectron Spectroscopy (XPS) Analysis of Oxidation Behavior of Hydrogen-radical-treated Cu Surfaces), 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）(IEEJ Transactions on Sensors and Micromachines), vol. 139, no. 2, pp. 38-39 (2019), DOI: 10.1541/ieejsmas.139.38.
11. Masahide Goto, Yuki Honda, Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi, Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, and Toshiro Hiramoto, Quarter Video Graphics Array Digital Pixel Image Sensing with Linear and Wide-Dynamic-Range Response by Using Pixel-Wise 3-D Integration, IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 969-975 (2019), DOI: 10.1109/TED.2018.2885072.
12. Fengwen Mu, Ran He, Michitaka Yamamoto, Eiji Higurashi, Tadatomo Suga, Miyuki Uomoto, Takehito Shimatsu, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Yinghui Wang, Yechao Sun, De-bondable SiC-SiC wafer bonding via an intermediate Ni nano-film, Applied Surface Science, vol. 465, no. 28, pp. 591-595 (2019), DOI: 10.1016/j.apsusc.2018.09.050.
13. Kai Takeuchi, Nobuyuki Takama, Beonjoon Kim, Kirti, Sharma, Oliver Paul, and Patrick Ruther, Microfluidic chip to interface porous microneedles for ISF collection, Biomedical Microdevices, 21, 28-37 (2019)

2018年

1. Nobutomo Morita, Wataru Iwasaki, Hirofumi Nogami, Fumiya Nakashima, Eiji Higurashi, and Renshi Sawada, Hematocrit-insensitive Absolute Blood Flow Rate Measurement in a 0.5 mm-diameter Flow Channel by MEMS-based Laser Doppler Velocimeter and Signal Modification for Detecting Beat Frequency from Broaden Power Spectrum, Sensors and Materials, vol. 30, no. 12, pp. 3009-3020 (2018), DOI: 10.18494/SAM.2018.2010.
2. Ryo Takigawa, Eiji Higurashi, and Tanemasa Asano, Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method, Japanese Journal of Applied Physics, vol. 57, no. 6S1, 06HJ12 (2018), DOI: 10.7567/JJAP.57.06HJ12.
3. Yuta Shiratori, Takuya Hoshi, Minoru Ida, Eiji Higurashi, and Hideaki Matsuzaki, High-Speed InP/InGaAsSb DHBT on High-Thermal-Conductivity SiC Substrate, IEEE Electron Device Letters, vol. 39, no. 6, pp. 807-810 (2018), DOI: 10.1109/LED.2018.2829531.
4. Michitaka Yamamoto, Eiji Higurashi, Tadatomo Suga, Renshi Sawada, Toshihiro Itoh, Properties of various plasma surface treatments for low-temperature Au-Au bonding, Japanese Journal of Applied Physics, vol. 57, no. 4S, 04FC12 (2018), DOI: 10.7567/JJAP.57.04FC12.
5. Eiji Higurashi, Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices, Japanese Journal of Applied Physics, vol. 57, no. 4S, 04FA02 (2018), DOI: 10.7567/JJAP.57.04FA02.
6. Nobutomo Morita, Hirofumi Nogami, Eiji Higurashi, and Renshi Sawada, Grasping force control for a robotic hand by slip detection using developed micro laser Doppler velocimeter, Sensors, vol. 18, no. 2, 326 (2018), DOI: 10.3390/s18020326.
7. Kohta Furuyama, Kazuyuki Yamanaka, Eiji Higurashi, and Tadatomo Suga, Evaluation of hydrogen radical treatment for indium surface oxide removal and analysis of re-oxidization behavior, Japanese Journal of Applied Physics, vol. 57, no. 2S1, 02BC01 (2018), DOI: 10.7567/JJAP.57.02BC01.
8. Kai Takeuchi, and Beonjoon Kim, Functionalized microneedles for continuous glucose monitoring, Nano Convergence, 5, 28-37 (2018)
9. Kai Takeuchi, Masahisa Fujino, Yoshiie Matsumoto, and Tadatomo Suga, Room temperature bonding and debonding of polyimide film and glass substrate based on surface activate bonding method, Japanese Journal of Applied Physics, 57, 02BB05 (2018)
10. Kai Takeuchi, Masahisa Fujino, Yoshiie Matsumoto, and Tadatomo Suga, Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer, Japanese Journal of Applied Physics, 57, 04FC11 (2018)